发明授权
- 专利标题： Conductive pattern and manufacturing method thereof
- 专利标题（中）： 导电图案及其制造方法
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申请号： US13148251申请日： 2010-02-08
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公开(公告)号： US08637776B2公开(公告)日： 2014-01-28
- 发明人: Ji-Young Hwang , In-Seok Hwang , Dong-Wook Lee , Min-Choon Park , Seung-Heon Lee , Sang-Ki Chun , Yong-Koo Son , Beom-Mo Koo
- 申请人： Ji-Young Hwang , In-Seok Hwang , Dong-Wook Lee , Min-Choon Park , Seung-Heon Lee , Sang-Ki Chun , Yong-Koo Son , Beom-Mo Koo
- 申请人地址： KR Seoul
- 专利权人： LG Chem, Ltd.
- 当前专利权人： LG Chem, Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： McKenna, Long & Aldridge, LLP
- 优先权： KR10-2009-0009750 20090206; KR10-2009-0127756 20091221
- 国际申请： PCT/KR2010/000763 WO 20100208
- 国际公布： WO2010/090488 WO 20100812
- 主分类号： H05K1/00
- IPC分类号： H05K1/00 ; H05K1/09 ; H05K1/03
摘要：
The present invention provides a method for manufacturing a conductive pattern, comprising the steps of: a) forming a conductive film on a substrate; b) forming an etching resist pattern on the conductive film; and c) forming a conductive pattern having a smaller line width than a width of the etching resist pattern by over-etching the conductive film by using the etching resist pattern, and a conductive pattern manufactured by using the same. According to the exemplary embodiment of the present invention, it is possible to effectively and economically provide a conductive pattern having a ultrafine line width.
公开/授权文献
- US20120031647A1 CONDUCTIVE PATTERN AND MANUFACTURING METHOD THEREOF 公开/授权日：2012-02-09
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