发明授权
- 专利标题： Semiconductor device and method of manufacturing semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US13129890申请日： 2009-10-23
-
公开(公告)号： US08637872B2公开(公告)日： 2014-01-28
- 发明人: Akihiko Sugai
- 申请人： Akihiko Sugai
- 申请人地址： JP Tokyo
- 专利权人： Showa Denko K.K.
- 当前专利权人： Showa Denko K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2008-295826 20081119
- 国际申请： PCT/JP2009/005606 WO 20091023
- 国际公布： WO2010/058524 WO 20100527
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L21/329
摘要：
A high-performance semiconductor device capable of suppressing a leak current with little electric field concentration, reducing an invalid region in a PN junction region, securing a sufficient area for a Schottky junction region, and achieving efficient and easy manufacturing, in which, in one surface of a semiconductor substrate (1) having a first conduction type made of SiC, a PN junction region (7a) and a Schottky junction region (7b) are provided, in the PN junction region (7a), a convex portion (2a) which has a trapezoidal shape in sectional view and includes a second conduction type layer (2) provided on the semiconductor substrate (1) and a contact layer (3) which is in ohmic contact with the second conduction type layer (2) of the convex portion (2a) are provided, and Schottky electrode (4) covers the side surface of the convex portion (2a) and the contact layer (3), and is provided continuously over the PN junction region (7a) and the Schottky junction region (7b).
公开/授权文献
信息查询
IPC分类:
