发明授权
- 专利标题: Semiconductor light emitting element
- 专利标题(中): 半导体发光元件
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申请号: US13369096申请日: 2012-02-08
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公开(公告)号: US08637886B2公开(公告)日: 2014-01-28
- 发明人: Yukie Tsuji
- 申请人: Yukie Tsuji
- 申请人地址: JP Aichi-ken
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Aichi-ken
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2011-026136 20110209
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A semiconductor light emitting element includes: a light emitting layer and a p-type semiconductor layer laminated on an n-type semiconductor layer; a transparent conductive layer laminated on the p-type semiconductor layer; a transparent insulating layer laminated on the transparent conductive layer and the exposed n-type semiconductor layer, the transparent insulating layer having plural tapered through-holes formed therein; a p-electrode formed on the transparent conductive layer with the transparent insulating layer interposed therebetween, the p-electrode being connected to the transparent conductive layer via the through-holes provided for the transparent insulating layer; and an n-electrode formed on the n-type semiconductor layer with the transparent insulating layer interposed therebetween, the n-electrode being connected to the n-type semiconductor layer via the through-holes provided for the transparent insulating layer.
公开/授权文献
- US20120199861A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 公开/授权日:2012-08-09
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