发明授权
- 专利标题: Semiconductor apparatus and method of trimming voltage
- 专利标题(中): 半导体装置及修整电压的方法
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申请号: US12966706申请日: 2010-12-13
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公开(公告)号: US08638006B2公开(公告)日: 2014-01-28
- 发明人: Jae Hyuk Im
- 申请人: Jae Hyuk Im
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK Hynix Inc.
- 当前专利权人: SK Hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: William Park & Associates Patent Ltd
- 优先权: KR10-2010-0106804 20101029
- 主分类号: H02J1/10
- IPC分类号: H02J1/10
摘要:
A semiconductor apparatus includes: a master chip and at least one slave chip configured to be stacked one on top of another; and a through-silicon via (TSV) configured to penetrate and electrically couple the master chip and the at least one slave chip, wherein the at least one slave chip receives a reference voltage generated from the master chip via the TSV and independently trims the reference voltage and then generates an internal voltage with the trimmed reference voltage.
公开/授权文献
- US20120105142A1 SEMICONDUCTOR APPARATUS AND METHOD OF TRIMMING VOLTAGE 公开/授权日:2012-05-03
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