发明授权
- 专利标题： Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot
- 专利标题（中）： 碳化硅晶体锭，碳化硅晶片，以及碳化硅晶锭的制造方法
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申请号： US13475360申请日： 2012-05-18
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公开(公告)号： US08642154B2公开(公告)日： 2014-02-04
- 发明人: Tsutomu Hori , Makoto Sasaki , Taro Nishiguchi , Shinsuke Fujiwara
- 申请人： Tsutomu Hori , Makoto Sasaki , Taro Nishiguchi , Shinsuke Fujiwara
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： Sumitomo Electric Insustries, Ltd.
- 当前专利权人： Sumitomo Electric Insustries, Ltd.
- 当前专利权人地址： JP Osaka-shi, Osaka
- 代理机构： Drinker Biddle & Reath LLP
- 优先权： JP2011-123040 20110601
- 主分类号： B32B3/02
- IPC分类号： B32B3/02
摘要：
A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.