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US08642425B2 Method of making an insulated gate semiconductor device and structure 有权
制造绝缘栅半导体器件和结构的方法

Method of making an insulated gate semiconductor device and structure
摘要：
In one embodiment, a trench shield electrode layer is separated from a trench gate electrode by an inter-electrode dielectric layer. A conformal deposited dielectric layer is formed as part of a gate dielectric structure and further isolates the trench shield electrode from the trench gate electrode. The conformal deposited dielectric layer is formed using an improved high temperature oxide (HTO) low pressure chemical vapor deposition (LPCVD) process.
摘要（中）：

在一个实施例中，沟槽屏蔽电极层通过电极间介电层与沟槽栅电极分离。 形成共形沉积介电层作为栅极电介质结构的一部分，并进一步将沟槽屏蔽电极与沟槽栅电极隔离。 使用改进的高温氧化物（HTO）低压化学气相沉积（LPCVD）工艺形成共形沉积介电层。

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