发明授权
- 专利标题： Method for manufacturing silicon carbide semiconductor device
- 专利标题（中）： 碳化硅半导体器件的制造方法
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申请号： US13502991申请日： 2011-02-25
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公开(公告)号： US08642476B2公开(公告)日： 2014-02-04
- 发明人: Satomi Itoh , Hiromu Shiomi , Yasuo Namikawa , Keiji Wada , Mitsuru Shimazu , Toru Hiyoshi
- 申请人： Satomi Itoh , Hiromu Shiomi , Yasuo Namikawa , Keiji Wada , Mitsuru Shimazu , Toru Hiyoshi
- 申请人地址： JP Osaka-shi
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka-shi
- 代理机构： Venable LLP
- 代理商 Michael A. Sartori
- 优先权： JP2010-136872 20100616
- 国际申请： PCT/JP2011/054333 WO 20110225
- 国际公布： WO2011/158534 WO 20111222
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted. By cleaning the first surface of the SiC semiconductor, a second surface is formed. On the second surface, a Si-containing film is formed. By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed.
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