发明授权
- 专利标题： Structure of high-K metal gate semiconductor transistor
- 专利标题（中）： 高K金属栅半导体晶体管的结构
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申请号： US12908024申请日： 2010-10-20
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公开(公告)号： US08643061B2公开(公告)日： 2014-02-04
- 发明人: Haizhou Yin , Dae-Gyu Park , Oleg Gluschenkov , Zhijiong Luo , Dominic Schepis , Jun Yuan
- 申请人： Haizhou Yin , Dae-Gyu Park , Oleg Gluschenkov , Zhijiong Luo , Dominic Schepis , Jun Yuan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Yuanmin Cai
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A semiconductor structure is provided. The structure includes an n-type field-effect-transistor (NFET) being formed directly on top of a strained silicon layer, and a p-type field-effect-transistor (PFET) being formed on top of the same stained silicon layer but via a layer of silicon-germanium (SiGe). The strained silicon layer may be formed on top of a layer of insulating material or a silicon-germanium layer with graded Ge content variation. Furthermore, the NFET and PFET are formed next to each other and are separated by a shallow trench isolation (STI) formed inside the strained silicon layer. Methods of forming the semiconductor structure are also provided.
公开/授权文献
- US20120098067A1 STRUCTURE OF HIGH-K METAL GATE SEMICONDUCTOR TRANSISTOR 公开/授权日：2012-04-26