发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13052028申请日: 2011-03-18
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公开(公告)号: US08643091B2公开(公告)日: 2014-02-04
- 发明人: Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
- 申请人: Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Patterson & Sheridan, LLP
- 优先权: JP2010-200251 20100907
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A semiconductor device includes first, second, third, and fourth semiconductor layers of alternating first and second conductivity types, an embedded electrode in a first trench that penetrates through the second semiconductor layer, a control electrode above the embedded electrode in the first trench, and first and second main electrodes. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench, which penetrates through the second semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer, and the second main electrode is in the second trench and electrically connected to the second, third, and fourth semiconductor layers. The embedded electrode is electrically connected to the second main electrode or the control electrode. A Shottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench.
公开/授权文献
- US20120056262A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-03-08