发明授权
US08643147B2 Seal ring structure with improved cracking protection and reduced problems
有权
密封环结构具有改进的开裂保护和减少的问题
- 专利标题: Seal ring structure with improved cracking protection and reduced problems
- 专利标题(中): 密封环结构具有改进的开裂保护和减少的问题
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申请号: US11933931申请日: 2007-11-01
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公开(公告)号: US08643147B2公开(公告)日: 2014-02-04
- 发明人: Shin-Puu Jeng , Shih-Hsun Hsu , Shang-Yun Hou , Hao-Yi Tsai , Chen-Hua Yu
- 申请人: Shin-Puu Jeng , Shih-Hsun Hsu , Shang-Yun Hou , Hao-Yi Tsai , Chen-Hua Yu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L23/544
- IPC分类号: H01L23/544
摘要:
An integrated circuit structure includes a lower dielectric layer; an upper dielectric layer over the lower dielectric layer; and a seal ring. The seal ring includes an upper metal line in the upper dielectric layer; a continuous via bar underlying and abutting the upper metal line, wherein the continuous via bar has a width greater than about 70 percent of a width of the upper metal line; a lower metal line in the lower dielectric layer; and a via bar underlying and abutting the lower metal line. The via bar has a width substantially less than a half of a width of the lower metal line.
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