Invention Grant
- Patent Title: Chip-on-Wafer structures and methods for forming the same
- Patent Title (中): 芯片晶片结构及其形成方法
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Application No.: US13397204Application Date: 2012-02-15
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Publication No.: US08643148B2Publication Date: 2014-02-04
- Inventor: Jing-Cheng Lin , Hsin Chang , Shih Ting Lin
- Applicant: Jing-Cheng Lin , Hsin Chang , Shih Ting Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/78
- IPC: H01L21/78

Abstract:
A package component includes a substrate, wherein the substrate has a front surface and a back surface over the front surface. A through-via penetrates through the substrate. A conductive feature is disposed over the back surface of the substrate and electrically coupled to the through-via. A first dielectric pattern forms a ring covering edge portions of the conductive feature. An Under-Bump-Metallurgy (UBM) is disposed over and in contact with a center portion of the conductive feature. A polymer contacts a sidewall of the substrate. A second dielectric pattern is disposed over and aligned to the polymer. The first and the second dielectric patterns are formed of a same dielectric material, and are disposed at substantially a same level.
Public/Granted literature
- US20130134559A1 Chip-on-Wafer Structures and Methods for Forming the Same Public/Granted day:2013-05-30
Information query
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