Invention Grant
- Patent Title: Semiconductor device with staggered leads
- Patent Title (中): 具有交错引线的半导体器件
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Application No.: US13461801Application Date: 2012-05-02
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Publication No.: US08643153B2Publication Date: 2014-02-04
- Inventor: Shunan Qiu , Zhigang Bai , Xuesong Xu , Beiyue Yan , You Ge
- Applicant: Shunan Qiu , Zhigang Bai , Xuesong Xu , Beiyue Yan , You Ge
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Priority: CN201110123304 20110513
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/48
Abstract:
A process for assembling a semiconductor device includes providing a lead frame having a native plane and a plurality of leads having a native lead pitch. The process includes trimming and forming a first subset of the plurality of leads to provide a first row of leads. The process includes trimming and forming a second subset of the plurality of leads to provide a second row of leads. At least one subset of leads is formed with an obtuse angle relative to the native plane such that lead pitch associated with the first or second subset of leads is greater than the native lead pitch.
Public/Granted literature
- US20120286406A1 SEMICONDUCTOR DEVICE WITH STAGGERED LEADS Public/Granted day:2012-11-15
Information query
IPC分类:
