发明授权
US08644091B2 Low voltage sensing scheme having reduced active power down standby current
有权
低电压感测方案具有降低的有功功率的待机电流
- 专利标题： Low voltage sensing scheme having reduced active power down standby current
- 专利标题（中）： 低电压感测方案具有降低的有功功率的待机电流
-
申请号： US13595857申请日： 2012-08-27
-
公开(公告)号： US08644091B2公开(公告)日： 2014-02-04
- 发明人: Tae Kim
- 申请人： Tae Kim
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dorsey & Whitney LLP
- 主分类号： G11C7/10
- IPC分类号： G11C7/10
摘要：
A low voltage sensing scheme reduces active power down standby leakage current in a memory device. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
公开/授权文献
信息查询
