- 专利标题： Conductive metal and diffusion barrier seed compositions, and methods of use in semiconductor and interlevel dielectric substrates
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申请号： US12986266申请日： 2011-01-07
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公开(公告)号： US08647535B2公开(公告)日： 2014-02-11
- 发明人: Kelly Malone , Habib Hichri
- 申请人： Kelly Malone , Habib Hichri
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Parashos Kalaitzis, Esq.
- 主分类号： H01B1/02
- IPC分类号： H01B1/02
摘要：
A metal seed composition useful in seeding a metal diffusion barrier or conductive metal layer on a semiconductor or dielectric substrate, the composition comprising: a nanoscopic metal component that includes a metal useful as a metal diffusion barrier or conductive metal; an adhesive component for attaching said nanoscopic metal component on said semiconductor or dielectric substrate; and a linker component that links said nanoscopic metal component with said adhesive component. Semiconductor and dielectric substrates coated with the seed compositions, as well as methods for depositing the seed compositions, are also described.