Invention Grant
- Patent Title: Method of forming an interconnect on a semiconductor substrate
- Patent Title (中): 在半导体衬底上形成互连的方法
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Application No.: US11937210Application Date: 2007-11-08
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Publication No.: US08647922B2Publication Date: 2014-02-11
- Inventor: Jijie Zhou , Zhong Chen
- Applicant: Jijie Zhou , Zhong Chen
- Applicant Address: SG Singapore
- Assignee: Nanyang Technological University
- Current Assignee: Nanyang Technological University
- Current Assignee Address: SG Singapore
- Agency: Cahn & Samuels, LLP
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L21/60
Abstract:
The present invention relates to a method of forming a wire bond-free conductive interconnect area on a semiconductor substrate. A semiconductor substrate with an electrically conductive protrusion, defining a bond pad, is provided as well as a plurality of carbon nanotubes. The plurality of carbon nanotubes is immobilized on the bond pad by allowing at least one random portion along the length of the carbon nanotubes to attach to the surface of the bond pad. Thus an aggregate of loops of carbon nanotubes is formed on the surface of the bond pad. Thereby a conductive interconnect area is formed on the electrically conductive protrusion without heat treatment.
Public/Granted literature
- US20090239338A1 Method of Forming an Interconnect on a Semiconductor Substrate Public/Granted day:2009-09-24
Information query
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