发明授权
- 专利标题: Method of forming semiconductor device
- 专利标题(中): 半导体器件形成方法
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申请号: US13211319申请日: 2011-08-17
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公开(公告)号: US08647941B2公开(公告)日: 2014-02-11
- 发明人: Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Teng-Chun Tsai
- 申请人: Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Teng-Chun Tsai
- 申请人地址: TW Science-Based Industrial Park, Hsin-Chu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A method of forming a semiconductor device includes the following steps. A semiconductor substrate having a first strained silicon layer is provided. Then, an insulating region such as a shallow trench isolation (STI) is formed, where a depth of the insulating region is substantially larger than a depth of the first strained silicon layer. Subsequently, the first strained silicon layer is removed, and a second strained silicon layer is formed to substitute the first strained silicon layer.
公开/授权文献
- US20130045579A1 METHOD OF FORMING SEMICONDUCTOR DEVICE 公开/授权日:2013-02-21