Invention Grant
US08647955B2 Methods for forming electrostatic discharge protection clamps with increased current capabilities
有权
用于形成具有增加的电流能力的静电放电保护夹的方法
- Patent Title: Methods for forming electrostatic discharge protection clamps with increased current capabilities
- Patent Title (中): 用于形成具有增加的电流能力的静电放电保护夹的方法
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Application No.: US13770548Application Date: 2013-02-19
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Publication No.: US08647955B2Publication Date: 2014-02-11
- Inventor: Rouying Zhan , Amaury Gendron , Chai Ean Gill
- Applicant: Rouying Zhan , Amaury Gendron , Chai Ean Gill
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/8222
- IPC: H01L21/8222 ; H01L23/62
Abstract:
Methods for forming an electrostatic discharge protection (ESD) clamps are provided. In one embodiment, the method includes forming at least one transistor having a first well region of a first conductivity type extending into a substrate. At least one transistor is formed having another well region of a second opposite conductivity type, which extends into the substrate to partially form a collector. The lateral edges of the transistor well regions are separated by a distance D, which at least partially determines a threshold voltage Vt1 of the ESD clamp. A base contact of the first conductivity type is formed in the first well region and separated from an emitter of the second conductivity type by a lateral distance Lbe. The first doping density and the lateral distance Lbe are selected to provide a parasitic base-emitter resistance Rbe in the range of 1
Public/Granted literature
- US20130157433A1 METHODS FOR FORMING ELECTROSTATIC DISCHARGE PROTECTION CLAMPS WITH INCREASED CURRENT CAPABILITIES Public/Granted day:2013-06-20
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