发明授权
US08647958B2 Method for fabricating semiconductor device having expanded critical dimension by performining surface treatment
失效
通过进行表面处理来制造具有扩大临界尺寸的半导体器件的方法
- 专利标题： Method for fabricating semiconductor device having expanded critical dimension by performining surface treatment
- 专利标题（中）： 通过进行表面处理来制造具有扩大临界尺寸的半导体器件的方法
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申请号： US12832187申请日： 2010-07-08
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公开(公告)号： US08647958B2公开(公告)日： 2014-02-11
- 发明人: Sang-Oh Lee
- 申请人： Sang-Oh Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2010-0051180 20100531
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for fabricating a semiconductor device includes forming an isolation layer over a substrate, forming a plurality of open regions exposing the substrate by selectively etching the isolation layer, performing a surface treatment over the isolation layer, expanding the open regions by removing the surface-treated portion of the isolation layer, and forming a conductive layer in the expanded open regions.
公开/授权文献
- US20110294275A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 公开/授权日：2011-12-01
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