发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13121122申请日： 2010-05-12
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公开(公告)号： US08648349B2公开(公告)日： 2014-02-11
- 发明人: Takeyoshi Masuda , Misako Honaga
- 申请人： Takeyoshi Masuda , Misako Honaga
- 申请人地址： JP Osaka-shi
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka-shi
- 代理机构： Venable LLP
- 代理商 Michael A. Sartori; Tamatane J. Aga
- 优先权： JP2009-189152 20090818
- 国际申请： PCT/JP2010/058019 WO 20100512
- 国际公布： WO2011/021413 WO 20110224
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
A MOSFET which is a semiconductor device capable of achieving a stable reverse breakdown voltage and reduced on-resistance includes a SiC wafer of an n conductivity type, a plurality of p bodies of a p conductivity type formed to include a first main surface of the SiC wafer, and n+ source regions of the n conductivity type formed in regions surrounded by the plurality of p bodies, respectively, when viewed two-dimensionally. Each of the p bodies has a circular shape when viewed two-dimensionally, and each of the n+ source regions is arranged concentrically with each of the p bodies and has a circular shape when viewed two-dimensionally. Each of the plurality of p bodies is arranged to be positioned at a vertex of a regular hexagon when viewed two-dimensionally.
公开/授权文献
- US20110180812A1 SEMICONDUCTOR DEVICE 公开/授权日：2011-07-28
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