Invention Grant
- Patent Title: Radiation-emitting device
- Patent Title (中): 辐射发射装置
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Application No.: US12747459Application Date: 2008-12-03
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Publication No.: US08648357B2Publication Date: 2014-02-11
- Inventor: Siegfried Herrmann
- Applicant: Siegfried Herrmann
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductor GmbH
- Current Assignee: OSRAM Opto Semiconductor GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102007060257 20071214; DE102008013030 20080307
- International Application: PCT/DE2008/002026 WO 20081203
- International Announcement: WO2009/076933 WO 20090625
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
A radiation-emitting device includes a first active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes, and a second active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes. The first active semiconductor layer and the second active semiconductor layer are arranged in a manner stacked one above another.
Public/Granted literature
- US20100264843A1 Radiation-Emitting Device Public/Granted day:2010-10-21
Information query
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