发明授权
US08648415B2 Semiconductor device with impurity region with increased contact area
有权
具有杂质区域的半导体器件具有增加的接触面积
- 专利标题： Semiconductor device with impurity region with increased contact area
- 专利标题（中）： 具有杂质区域的半导体器件具有增加的接触面积
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申请号： US12967089申请日： 2010-12-14
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公开(公告)号： US08648415B2公开(公告)日： 2014-02-11
- 发明人: Koji Taniguchi
- 申请人： Koji Taniguchi
- 代理机构： Young & Thompson
- 优先权： JP2009-288045 20091218
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A semiconductor device includes a semiconductor substrate, an impurity region in the semiconductor substrate, and a conductive layer contacting a top surface of the impurity region and at least a side surface of the impurity region.
公开/授权文献
- US20110147834A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日：2011-06-23
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