A nonvolatile memory device includes an array of resistive memory cells and a write driver, which is configured to drive a selected bit line in the array with a reset current pulse, which is responsive to a first external voltage input through a first terminal/pad of the memory device during a memory cell reset operation. The write driver is further configured to drive the selected bit line in sequence with a first set current pulse, which is responsive to the first external voltage, and a second set current pulse, which is responsive to a second external voltage input through a second terminal/pad of the memory device during a memory cell set operation.