Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
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Application No.: US13403294Application Date: 2012-02-23
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Publication No.: US08649223B2Publication Date: 2014-02-11
- Inventor: Takashi Maeda
- Applicant: Takashi Maeda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-065031 20110323
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
According to one embodiment, a device includes transistors each with a path connected to a bit line, and circuits each includes a switch, the circuit being connected to the bit line. The device includes a amplifier connected to the transistor and to the circuit, and a latch connected to the amplifier to hold first data before read is carried out on a cell and to hold second data if a current equal to or a larger than a predetermined value flows via the bit line. In the device, the switch is turned on or off depending on data held in another latch located adjacently in a direction of the word lines, to control a connection between the bit line and connected to another bit line the amplifier via the circuit.
Public/Granted literature
- US20120243326A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2012-09-27
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