Invention Grant
US08652343B2 Method for selectively removing material from the surface of a substrate, masking material for a wafer, and wafer with masking material
有权
用于从衬底的表面选择性地去除材料的方法，用于晶片的掩模材料和具有掩模材料的晶片
- Patent Title: Method for selectively removing material from the surface of a substrate, masking material for a wafer, and wafer with masking material
- Patent Title (中): 用于从衬底的表面选择性地去除材料的方法，用于晶片的掩模材料和具有掩模材料的晶片
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Application No.: US10524525Application Date: 2003-08-14
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Publication No.: US08652343B2Publication Date: 2014-02-18
- Inventor: Martin Hausner
- Applicant: Martin Hausner
- Applicant Address: SG Singapore
- Assignee: Excelitas Technologies Singapore Pte. Ltd.
- Current Assignee: Excelitas Technologies Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Sheehan Phinney Bass + Green PA
- Agent Peter A. Nieves
- Priority: DE10237249 20020814
- International Application: PCT/EP03/09052 WO 20030814
- International Announcement: WO2004/017361 WO 20040226
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/302
Abstract:
A method for the selective removal of material from a substrate surface for forming a deepening includes the steps of applying a mask onto the substrate surface in accordance with the desired selective removal and dry-etching the substrate, a metal, preferably aluminum, being used as the masking material. Power may be coupled inductively to a plasma.
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