Invention Grant
US08652749B2 Photoresist composition and method of forming pattern by using the same
有权
光刻胶组合物及使用其形成图案的方法
- Patent Title: Photoresist composition and method of forming pattern by using the same
- Patent Title (中): 光刻胶组合物及使用其形成图案的方法
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Application No.: US13037212Application Date: 2011-02-28
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Publication No.: US08652749B2Publication Date: 2014-02-18
- Inventor: Hi-Kuk Lee , Sang-Hyun Yun , Cha-Dong Kim , Jung-In Park , Deok-Man Kang , Youn-Suk Kim , Sae-Tae Oh
- Applicant: Hi-Kuk Lee , Sang-Hyun Yun , Cha-Dong Kim , Jung-In Park , Deok-Man Kang , Youn-Suk Kim , Sae-Tae Oh
- Applicant Address: KR Yongin KR Seoul
- Assignee: Samsung Display Co., Ltd.,AZ Electronic Materials (Korea) Ltd.
- Current Assignee: Samsung Display Co., Ltd.,AZ Electronic Materials (Korea) Ltd.
- Current Assignee Address: KR Yongin KR Seoul
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0046449 20100518
- Main IPC: G03F7/023
- IPC: G03F7/023 ; G03F7/30
Abstract:
A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. and R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.
Public/Granted literature
- US20110287360A1 PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME Public/Granted day:2011-11-24
Information query
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