Invention Grant
- Patent Title: Low resistance stacked annular contact
- Patent Title (中): 低电阻堆叠环形接触
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Application No.: US13434511Application Date: 2012-03-29
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Publication No.: US08652855B2Publication Date: 2014-02-18
- Inventor: Scott Robert Summerfelt , Hasibur Rahman , John Paul Campbell
- Applicant: Scott Robert Summerfelt , Hasibur Rahman , John Paul Campbell
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8242 ; H01L21/02 ; H01L21/108 ; H01L23/48

Abstract:
An integrated circuit contains lower components in the substrate, a PMD layer, upper components over the PMD layer, lower contacts in the PMD layer connecting some upper components to some lower components, an ILD layer over the upper components, metal interconnect lines over the ILD layer, and upper contacts connecting some upper components to some metal interconnect lines, and also includes annular stacked contacts of lower annular contacts aligned with upper annular contacts. The lower contacts and upper contacts each have a metal liner and a contact metal on the liner. The lower annular contacts have at least one ring of liner metal and contact metal surrounding a pillar of PMD material, and the upper contacts have at least one ring of liner metal and contact metal surrounding a pillar of ILD material. The annular stacked contacts connect the metal interconnects to the lower components.
Public/Granted literature
- US20130082314A1 LOW RESISTANCE STACKED ANNULAR CONTACT Public/Granted day:2013-04-04
Information query
IPC分类: