Invention Grant
- Patent Title: Semiconductor device having a damp-proof structure and method of fabricating the same
- Patent Title (中): 具有防潮结构的半导体装置及其制造方法
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Application No.: US13759584Application Date: 2013-02-05
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Publication No.: US08652921B2Publication Date: 2014-02-18
- Inventor: Seung-Jun Lee , Woonkyung Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2008-0098896 20081009; KR10-2010-0007505 20100127
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/76
Abstract:
A semiconductor device has a substrate that includes a cell array region and a dummy pattern region surrounding the cell array region. The cell array region includes a cell structure having a plurality of cell active pillars extending in a vertical direction from the cell array region of the substrate and includes cell gate patterns and cell gate interlayer insulating patterns alternately stacked on the substrate. The cell gate patterns and cell gate interlayer insulating patterns have sides facing the cell active pillars. The dummy pattern region includes a damp-proof structure.
Public/Granted literature
- US20130171809A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-07-04
Information query
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