Invention Grant
- Patent Title: Integration of non-noble DRAM electrode
- Patent Title (中): 非贵重DRAM电极的集成
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Application No.: US13738510Application Date: 2013-01-10
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Publication No.: US08652927B2Publication Date: 2014-02-18
- Inventor: Sandra Malhotra , Hanhong Chen , Wim Y. Deweerd , Edward L. Haywood , Hiroyuki Ode , Gerald Richardson
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.
Public/Granted literature
- US20130320495A1 Integration of Non-Noble DRAM Electrode Public/Granted day:2013-12-05
Information query
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