Invention Grant
- Patent Title: Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
- Patent Title (中): 基于非极性和半极性铝氮化铟和氮化铟镓合金的光电器件
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Application No.: US13718152Application Date: 2012-12-18
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Publication No.: US08653503B2Publication Date: 2014-02-18
- Inventor: Roy B. Chung , Zhen Chen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
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