发明授权
- 专利标题: Semiconductor device with sidewall insulating layer
- 专利标题(中): 具有侧壁绝缘层的半导体器件
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申请号: US13029146申请日: 2011-02-17
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公开(公告)号: US08653513B2公开(公告)日: 2014-02-18
- 发明人: Hideomi Suzawa , Shinya Sasagawa , Motomu Kurata
- 申请人: Hideomi Suzawa , Shinya Sasagawa , Motomu Kurata
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2010-043137 20100226
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode, in which the source electrode or the drain electrode comprises a first conductive layer and a second conductive layer having a region which extends beyond an end portion of the first conductive layer in a channel length direction and which overlaps with part of the gate electrode, in which a sidewall insulating layer is provided over the extended region of the second conductive layer, and in which the sidewall insulating layer comprises a stack of a plurality of different material layers.
公开/授权文献
- US20110210326A1 SEMICONDUCTOR DEVICE 公开/授权日:2011-09-01