Invention Grant
- Patent Title: Superjunction device and method for manufacturing the same
- Patent Title (中): 超结装置及其制造方法
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Application No.: US13603658Application Date: 2012-09-05
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Publication No.: US08653586B2Publication Date: 2014-02-18
- Inventor: Shengan Xiao
- Applicant: Shengan Xiao
- Applicant Address: CN Shanghai
- Assignee: Shanghai Hua Hong Nec Electronics Co., Ltd.
- Current Assignee: Shanghai Hua Hong Nec Electronics Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN201110265394 20110908
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/20
Abstract:
A superjunction device is disclosed, wherein P-type regions in an active region are not in contact with the N+ substrate, and the distance between the surface of the N+ substrate and the bottom of the P-type regions in the active region is greater than the thickness of a transition region in the N-type epitaxial layer. Methods for manufacturing the superjunction device are also disclosed. The present invention is capable of improving the uniformity of reverse breakdown voltage and overshoot current handling capability in a superjunction device.
Public/Granted literature
- US20120326226A1 SUPERJUNCTION DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-12-27
Information query
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