Invention Grant
US08653611B2 Semiconductor device with metal gates and method for fabricating the same
有权
具有金属栅极的半导体器件及其制造方法
- Patent Title: Semiconductor device with metal gates and method for fabricating the same
- Patent Title (中): 具有金属栅极的半导体器件及其制造方法
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Application No.: US13027379Application Date: 2011-02-15
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Publication No.: US08653611B2Publication Date: 2014-02-18
- Inventor: Yun-Hyuck Ji , Tae-Yoon Kim , Seung-Mi Lee , Woo-Young Park
- Applicant: Yun-Hyuck Ji , Tae-Yoon Kim , Seung-Mi Lee , Woo-Young Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0074356 20100730
- Main IPC: H01L29/51
- IPC: H01L29/51
Abstract:
A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.
Public/Granted literature
- US20120025327A1 SEMICONDUCTOR DEVICE WITH METAL GATES AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-02-02
Information query
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