Invention Grant
- Patent Title: Planarized bumps for underfill control
- Patent Title (中): 用于底部填充控制的平面化凸块
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Application No.: US13308162Application Date: 2011-11-30
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Publication No.: US08653658B2Publication Date: 2014-02-18
- Inventor: Jing-Cheng Lin , Po-Hao Tsai
- Applicant: Jing-Cheng Lin , Po-Hao Tsai
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/50 ; H01L21/768

Abstract:
The mechanisms for forming bump structures reduce variation of standoffs between chips and package substrates. By planarizing the solder layer on bump structures on chips and/or substrates after plating, the heights of bump structures are controlled to minimize variation due to within die and within wafer locations, pattern density, die size, and process variation. As a result, the standoffs between chips and substrates are controlled to be more uniform. Consequently, underfill quality is improved.
Public/Granted literature
- US20130134581A1 PLANARIZED BUMPS FOR UNDERFILL CONTROL Public/Granted day:2013-05-30
Information query
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