发明授权
- 专利标题： Charge pump control scheme for memory word line
- 专利标题（中）： 记忆字线电荷泵控制方案
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申请号： US12970123申请日： 2010-12-16
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公开(公告)号： US08654589B2公开(公告)日： 2014-02-18
- 发明人: Hung-Chang Yu , Yue-Der Chih
- 申请人： Hung-Chang Yu , Yue-Der Chih
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A memory includes a word line, a charge pump coupled to the word line, and a charge pump control circuit coupled to the charge pump. The charge pump control circuit is configured to turn on the charge pump if the word line voltage is lower than a first threshold voltage and turn off the charge pump if the word line voltage is higher than a second threshold voltage.
公开/授权文献
- US20120134228A1 CHARGE PUMP CONTROL SCHEME FOR MEMORY WORD LINE 公开/授权日：2012-05-31