Invention Grant
- Patent Title: Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same
- Patent Title (中): 通过氢官能化制造的半导体碳纳米管及其制造方法
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Application No.: US12023475Application Date: 2008-01-31
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Publication No.: US08658484B2Publication Date: 2014-02-25
- Inventor: Won-bong Choi , Young-hee Lee
- Applicant: Won-bong Choi , Young-hee Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR2002-24476 20020503
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.
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