发明授权
- 专利标题: Isolation by implantation in LED array manufacturing
- 专利标题(中): 通过植入在LED阵列制造中的隔离
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申请号: US13098942申请日: 2011-05-02
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公开(公告)号: US08658513B2公开(公告)日: 2014-02-25
- 发明人: Fareen Adeni Khaja , Deepak Ramappa , San Yu , Chi-Chun Chen
- 申请人: Fareen Adeni Khaja , Deepak Ramappa , San Yu , Chi-Chun Chen
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
An improved method of creating LED arrays is disclosed. A p-type layer, multi-quantum well and n-type layer are disposed on a substrate. The device is then etched to expose portions of the n-type layer. To create the necessary electrical isolation between adjacent LEDs, an ion implantation is performed to create a non-conductive implanted region. In some embodiments, an implanted region extends through the p-type layer, MQW and n-type layer. In another embodiment, a first implanted region is created in the n-type layer. In addition, a second implanted region is created in the p-type layer and multi-quantum well immediately adjacent to etched n-type layer. In some embodiments, the ion implantation is done perpendicular to the substrate. In other embodiments, the implant is performed at an angle.
公开/授权文献
- US20110275173A1 ISOLATION BY IMPLANTATION IN LED ARRAY MANUFACTURING 公开/授权日:2011-11-10
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