发明授权
- 专利标题: Method of fabricating an epitaxial Ni silicide film
- 专利标题(中): 制造外延Ni硅化物膜的方法
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申请号: US13612240申请日: 2012-09-12
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公开(公告)号: US08658530B2公开(公告)日: 2014-02-25
- 发明人: Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
- 申请人: Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
- 申请人地址: US NY Armonk KY Grand Cayman
- 专利权人: International Business Machines Corporation,GlobalFoundries Inc.
- 当前专利权人: International Business Machines Corporation,GlobalFoundries Inc.
- 当前专利权人地址: US NY Armonk KY Grand Cayman
- 代理机构: Novak Druce Connolly Bove + Quigg LLP
- 代理商 Louis J. Percello, Esq.
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L21/477 ; H01L21/36
摘要:
An epitaxial Ni silicide film that is substantially non-agglomerated at high temperatures, and a method for forming the epitaxial Ni silicide film, is provided. The Ni silicide film of the present disclosure is especially useful in the formation of ETSOI (extremely thin silicon-on-insulator) Schottky junction source/drain FETs. The resulting epitaxial Ni silicide film exhibits improved thermal stability and does not agglomerate at high temperatures.
公开/授权文献
- US20130012020A1 USE OF EPITAXIAL NI SILICIDE 公开/授权日:2013-01-10