An intermediate layer including at least one of elements constituting a phase change material and silicon is arranged between a recording layer composed of the phase change material and an n+ polysilicon film to reduce contact resistance between the recording layer and the n+ polysilicon film, thereby simplifying the structure of a phase change memory and reducing the cost thereof. If the phase change material contains Ge, Sb, and Te, for example, the intermediate layer includes at least one of Si—Sb, Si—Te, and Si—Ge.