发明授权
- 专利标题： Nitrogen passivation of source and drain recesses
- 专利标题（中）： 源极和漏极凹槽的氮钝化
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申请号： US13267648申请日： 2011-10-06
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公开(公告)号： US08659089B2公开(公告)日： 2014-02-25
- 发明人: Jia-Yang Ko , Ching-Chien Huang , Ying-Han Chiou , Ling-Sung Wang
- 申请人： Jia-Yang Ko , Ching-Chien Huang , Ying-Han Chiou , Ling-Sung Wang
- 申请人地址： CN Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： CN Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. In an example, the method includes providing a substrate; forming a gate structure over the substrate; removing portions of the substrate to form a first recess and a second recess in the substrate, such that the gate structure interposes the first recess and the second recess; forming a nitrogen passivation layer in the substrate, such that the first recess and the second recess are defined by nitrogen passivated surfaces of the substrate; and forming doped source and drain features over the nitrogen passivated surfaces of the first recess and the second recess, the doped source and drain features filling the first and second recesses.
公开/授权文献
- US20130087857A1 NITROGEN PASSIVATION OF SOURCE AND DRAIN RECESSES 公开/授权日：2013-04-11
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