Invention Grant
- Patent Title: Isolated wire structures with reduced stress, methods of manufacturing and design structures
- Patent Title (中): 具有减小应力的隔离线结构,制造方法和设计结构
-
Application No.: US13734130Application Date: 2013-01-04
-
Publication No.: US08659173B1Publication Date: 2014-02-25
- Inventor: Jeffrey P. Gambino , Zhong-Xiang He , Tom C. Lee
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Richard M. Kotulak
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
An integrated circuit (IC) including a set of isolated wire structures disposed within a layer of the IC, methods of manufacturing the same and design structures are disclosed. The method includes forming adjacent wiring structures on a same level, with a space therebetween. The method further includes forming a capping layer over the adjacent wiring structures on the same level, including on a surface of a material between the adjacent wiring structures. The method further includes forming a photosensitive material over the capping layer. The method further includes forming an opening in the photosensitive material between the adjacent wiring structures to expose the capping layer. The method further includes removing the exposed capping layer.
Information query
IPC分类: