Invention Grant
- Patent Title: Plasma attenuation for uniformity control
- Patent Title (中): 用于均匀度控制的等离子体衰减
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Application No.: US13108052Application Date: 2011-05-16
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Publication No.: US08659229B2Publication Date: 2014-02-25
- Inventor: Peter Kurunczi , Frank Sinclair , Costel Biloiu , Ludovic Godet , Ernest Allen
- Applicant: Peter Kurunczi , Frank Sinclair , Costel Biloiu , Ludovic Godet , Ernest Allen
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H05H1/24
- IPC: H05H1/24

Abstract:
A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.
Public/Granted literature
- US20120293070A1 PLASMA ATTENUATION FOR UNIFORMITY CONTROL Public/Granted day:2012-11-22
Information query
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