Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) in response to process-voltage-temperature variations when needed. Embodiments include a critical path that simulates a typical memory cell and read-out circuit in the SRAM. Applying a trigger signal to a word-line input port of the critical path, and comparing the output of the critical path to a reference-latch signal, provides an indication of when to boost the supply voltage to the read-out circuits of the SRAM.