发明授权
- 专利标题： Memory system
- 专利标题（中）： 内存系统
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申请号： US13358763申请日： 2012-01-26
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公开(公告)号： US08661191B2公开(公告)日： 2014-02-25
- 发明人: Junji Yano , Kosuke Hatsuda , Hidenori Matsuzaki
- 申请人： Junji Yano , Kosuke Hatsuda , Hidenori Matsuzaki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-051478 20080301
- 主分类号： G06F12/00
- IPC分类号： G06F12/00
摘要：
A memory system according to an embodiment of the present invention comprises: a data managing unit 120 is divided into a DRAM-layer managing unit 120a, a logical-NAND-layer managing unit 120b, and a physical-NAND-layer managing unit 120c to independently perform management of a DRAM layer, a logical NAND layer, and a physical NAND layer using the respective managing units to thereby perform efficient block management.
公开/授权文献
- US20120124330A1 MEMORY SYSTEM 公开/授权日：2012-05-17
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