Invention Grant
- Patent Title: Method of manufacturing single crystal wire and other single crystal metallic articles
- Patent Title (中): 单晶线及其他单晶金属制品的制造方法
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Application No.: US12436754Application Date: 2009-05-06
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Publication No.: US08663388B2Publication Date: 2014-03-04
- Inventor: Se Young Jeong , Chae Ryong Cho , Sang Eon Park , Sung Kyu Kim
- Applicant: Se Young Jeong , Chae Ryong Cho , Sang Eon Park , Sung Kyu Kim
- Applicant Address: KR
- Assignee: Korea Electrotechnology Research Institute
- Current Assignee: Korea Electrotechnology Research Institute
- Current Assignee Address: KR
- Agency: Park & Associates IP Law, P.C.
- Priority: KR10-2004-0075550 20040921
- Main IPC: C30B11/00
- IPC: C30B11/00

Abstract:
Disclosed are a single crystal wire and other single crystal articles, and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using metal crystal as a seed by Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and machining the cut single crystal and producing a wire or other articles such as a ring. In the method, the grown metal single crystal is cut into a disc-shaped piece by electric discharge machining. The piece is transformed into a single crystal wire or other articles by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant, or a wire for high-quality cables for audio and video systems. Also, the single crystal formed into the disc-shaped piece by electric discharge machining can be used as a substrate and a target for deposition.
Public/Granted literature
- US20090211516A1 METHOD OF MANUFACTURING SINGLE CRYSTAL WIRE Public/Granted day:2009-08-27
Information query
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