发明授权
US08664079B2 Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate
有权
通过在衬底的正面和背面上减薄硬掩模层来制造半导体器件的方法
- 专利标题： Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate
- 专利标题（中）： 通过在衬底的正面和背面上减薄硬掩模层来制造半导体器件的方法
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申请号： US13316817申请日： 2011-12-12
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公开(公告)号： US08664079B2公开(公告)日： 2014-03-04
- 发明人: Han-Guan Chew , Ming Zhu , Lee-Wee Teo , Harry-Hak-Lay Chuang
- 申请人： Han-Guan Chew , Ming Zhu , Lee-Wee Teo , Harry-Hak-Lay Chuang
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
The disclosure relates to integrated circuit fabrication, and more particularly to a method for fabricating a semiconductor device. An exemplary method for fabricating the semiconductor device comprises providing a substrate; forming pad oxide layers over a frontside and a backside of the substrate; forming hardmask layers over the pad oxide layers on the frontside and the backside of the substrate; and thinning the hardmask layer over the pad oxide layer on the frontside of the substrate.