发明授权
US08664081B2 Method for fabricating 3D integrated circuit device using interface wafer as permanent carrier
有权
使用接口晶片作为永久载体制造3D集成电路器件的方法
- 专利标题: Method for fabricating 3D integrated circuit device using interface wafer as permanent carrier
- 专利标题(中): 使用接口晶片作为永久载体制造3D集成电路器件的方法
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申请号: US13572037申请日: 2012-08-10
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公开(公告)号: US08664081B2公开(公告)日: 2014-03-04
- 发明人: Mukta G. Farooq , Robert Hannon , Subramanian S. Iyer , Steven J. Koester , Fei Liu , Sampath Purushothaman , Albert M. Young , Roy R. Yu
- 申请人: Mukta G. Farooq , Robert Hannon , Subramanian S. Iyer , Steven J. Koester , Fei Liu , Sampath Purushothaman , Albert M. Young , Roy R. Yu
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Fleit Gibbons Gutman Bongini & Bianco PL
- 代理商 Stephen Bongini
- 主分类号: H01L21/30
- IPC分类号: H01L21/30
摘要:
A computer readable medium is provided that is encoded with a program comprising instructions for performing a method for fabricating a 3D integrated circuit structure. Provided are an interface wafer including a first wiring layer and through-silicon vias, and a first active circuitry layer wafer including active circuitry. The first active circuitry layer wafer is bonded to the interface wafer. Then, a first portion of the first active circuitry layer wafer is removed such that a second portion remains attached to the interface wafer. A stack structure including the interface wafer and the second portion of the first active circuitry layer wafer is bonded to a base wafer. Next, the interface wafer is thinned so as to form an interface layer, and metallizations coupled through the through-silicon vias in the interface layer to the first wiring layer are formed on the interface layer.