发明授权
US08664081B2 Method for fabricating 3D integrated circuit device using interface wafer as permanent carrier 有权
使用接口晶片作为永久载体制造3D集成电路器件的方法

Method for fabricating 3D integrated circuit device using interface wafer as permanent carrier
摘要:
A computer readable medium is provided that is encoded with a program comprising instructions for performing a method for fabricating a 3D integrated circuit structure. Provided are an interface wafer including a first wiring layer and through-silicon vias, and a first active circuitry layer wafer including active circuitry. The first active circuitry layer wafer is bonded to the interface wafer. Then, a first portion of the first active circuitry layer wafer is removed such that a second portion remains attached to the interface wafer. A stack structure including the interface wafer and the second portion of the first active circuitry layer wafer is bonded to a base wafer. Next, the interface wafer is thinned so as to form an interface layer, and metallizations coupled through the through-silicon vias in the interface layer to the first wiring layer are formed on the interface layer.
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