发明授权
US08664109B2 Advanced low k cap film formation process for nano electronic devices
有权
用于纳米电子器件的高级低k帽成膜工艺
- 专利标题： Advanced low k cap film formation process for nano electronic devices
- 专利标题（中）： 用于纳米电子器件的高级低k帽成膜工艺
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申请号： US13444415申请日： 2012-04-11
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公开(公告)号： US08664109B2公开(公告)日： 2014-03-04
- 发明人: Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
- 申请人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
- 申请人地址： US NY Armonk KY Grand Cayman
- 专利权人： International Business Machines Corporation,Global Foundries, Inc.
- 当前专利权人： International Business Machines Corporation,Global Foundries, Inc.
- 当前专利权人地址： US NY Armonk KY Grand Cayman
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/31
摘要：
A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.
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