Invention Grant
- Patent Title: Light emitting devices having light coupling layers with recessed electrodes
- Patent Title (中): 具有具有凹陷电极的光耦合层的发光器件
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Application No.: US13249196Application Date: 2011-09-29
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Publication No.: US08664679B2Publication Date: 2014-03-04
- Inventor: Li Yan , Chao-Kun Lin , Chih-Wei Chuang
- Applicant: Li Yan , Chao-Kun Lin , Chih-Wei Chuang
- Applicant Address: JP Tokyo
- Assignee: Toshiba Techno Center Inc.
- Current Assignee: Toshiba Techno Center Inc.
- Current Assignee Address: JP Tokyo
- Agency: Hogan Lovells US LLP
- Main IPC: H01L33/58
- IPC: H01L33/58
Abstract:
A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.
Public/Granted literature
- US20130082290A1 LIGHT EMITTING DEVICES HAVING LIGHT COUPLING LAYERS WITH RECESSED ELECTRODES Public/Granted day:2013-04-04
Information query
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