Invention Grant
- Patent Title: Metal-oxide-semiconductor capacitor
- Patent Title (中): 金属氧化物半导体电容器
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Application No.: US13481963Application Date: 2012-05-29
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Publication No.: US08664705B2Publication Date: 2014-03-04
- Inventor: Kai-Ling Chiu , Chao-Sheng Cheng , Chih-Yu Tseng , Yu-Jen Liu
- Applicant: Kai-Ling Chiu , Chao-Sheng Cheng , Chih-Yu Tseng , Yu-Jen Liu
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
A MOS capacitor includes a substrate, a p-type MOS (pMOS) transistor positioned on the substrate, and an n-type MOS (nMOS) transistor positioned on the substrate. More important, the pMOS transistor and the nMOS transistor are electrically connected in parallel. The MOS transistor further includes a deep n-well that encompassing the pMOS transistor and the nMOS transistor.
Public/Granted literature
- US20130320421A1 METAL-OXIDE-SEMICONDUCTOR CAPACITOR Public/Granted day:2013-12-05
Information query
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