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US08664705B2 Metal-oxide-semiconductor capacitor 有权
金属氧化物半导体电容器

Metal-oxide-semiconductor capacitor
Abstract:
A MOS capacitor includes a substrate, a p-type MOS (pMOS) transistor positioned on the substrate, and an n-type MOS (nMOS) transistor positioned on the substrate. More important, the pMOS transistor and the nMOS transistor are electrically connected in parallel. The MOS transistor further includes a deep n-well that encompassing the pMOS transistor and the nMOS transistor.
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