发明授权
- 专利标题: Magnetoresistive element and magnetic memory
- 专利标题(中): 磁阻元件和磁记忆体
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申请号: US13407039申请日: 2012-02-28
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公开(公告)号: US08665639B2公开(公告)日: 2014-03-04
- 发明人: Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
- 申请人: Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.
公开/授权文献
- US20120163070A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 公开/授权日:2012-06-28